Abstract: An accurate behavioral simulation model for single photon avalanche photodiode (SPAD) was proposed. This presented model solved the convergence problem existed in SPAD avalanche current simulation, and achieved the basic static DC and dynamic AC behaviors modeling. The model functions were extended. Two important statistical effects of dark-counting and after-pulsing phenomena were included in this model according to their physical mechanisms. The model has been written in Verilog-A hardware description language, showing good characteristics of transplantation and universality. A good agreement with more than 90% accuracy is achieved between the model basic simulations and the experimental results, proving the high accuracy of model and good convergence during simulation. Meanwhile, the added simulation functions of dark-counting and after-pulsing further improves the model practicability.

Key words: Single Photon Avalanche Diode (SPAD), circuit simulation, behavioral modeling, statistical efFects