系统仿真学报 ›› 2018, Vol. 30 ›› Issue (8): 2884-2891.doi: 10.16182/j.issn1004731x.joss.201808009

• 仿真建模理论与方法 • 上一篇    下一篇

一种带有非线性漂移函数的分数阶忆阻器模型

甘朝晖, 张士英, 吴宇鑫   

  1. 武汉科技大学信息科学与工程学院,湖北 武汉 430081
  • 收稿日期:2016-11-18 出版日期:2018-08-10 发布日期:2019-01-08
  • 作者简介:甘朝晖(1969-),男,湖北武汉,博士,教授,研究方向为忆阻器及忆阻系统,人工智能及机器人;张士英(1991-),男,河北石家庄,硕士,研究方向为嵌入式及其应用,忆阻器及忆阻系统。
  • 基金资助:
    国家自然科学基金(41571396)

Fractional-order Memristor Model with Nonlinear Drift Function

Gan Zhaohui, Zhang Shiying, Wu Yuxin   

  1. School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan 430081, China
  • Received:2016-11-18 Online:2018-08-10 Published:2019-01-08

摘要: 忆阻器是具有记忆功能的非线性电阻,被公认为第四种基本的电路元件。分数阶忆阻器模型是整数阶忆阻器模型的推广,科研人员已经证实了分数阶忆阻器模型的存在,并分析了分数阶忆阻器模型的响应特性。在分析了现有整数阶和分数阶忆阻器模型的基础上提出了一种带有非线性漂移函数的分数阶忆阻器模型,并对忆阻器在阶跃信号、正弦和非正弦周期信号激励下的响应特性进行了实验分析,结果表明该模型能够较好地模拟分数阶忆阻器的特性,同时分数阶阶次和控制参数对忆阻器特性的影响规律也得到了分析和总结,对忆阻器在电学领域的应用具有一定的参考价值。

关键词: 忆阻器, 分数阶, 模型, 特性

Abstract: A memristor is a nonlinear resistor with memory. It is regarded as the fourth basic circuit elements. The fractional order model of memristor is an extension of integer order model for memristor. Some researchers have confirmed the existence of fractional order model for memristor, and the response characteristic of the fractional order model excited by different types of signals is analyzed. Based on the analysis of some existing integer order and fractional order models for memristor, a novel fractional order memristor model with nonlinear drift function is proposed, and the response characteristics of fractional order model for memristor with nonlinear drift function excited by step signal, sine and non-sinusoidal periodic signals are analyzed. The experiment results show that the proposed model can simulate fractional order memristor characteristic well. The influence of fractional order and control parameters on the characteristic of memristor is also analyzed and summarized. These results have a certain reference value for some memristor applications in electrical field.

Key words: memristor, fractional-order, model, characteristic

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