Parallel Finite Element Simulations on Radiation Damage Effects of Lateral PNP BJTs

doi:10.16182/j.issn1004731x.joss.20-FZ0477

Journal of System Simulation ›› 2020, Vol. 32 ›› Issue (12): 2376-2382.doi: 10.16182/j.issn1004731x.joss.20-FZ0477

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Parallel Finite Element Simulations on Radiation Damage Effects of Lateral PNP BJTs

Wang Qin^1,2, Ma Zhaocan^1,2, Li Hongliang³, Zhang Linbo^1,2, Lu Benzhuo^1,2

1. LSEC,NCMIS,Institute of Computational Mathematics and Scientific/Engineering Computing,Academy of Mathematics and Systems Science,Chinese Academy of Sciences,Beijing 100190,China;
2. School of Mathematical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China;
3. Department of Mathematics,Sichuan Normal University,Chengdu 610066,China

Received:2020-03-31 Revised:2020-07-12 Online:2020-12-18 Published:2020-12-16

Abstract

Abstract: The Zlamal finite element discretization is applied in the drift-diffusion model for the simulations of semiconductor devices.Combined with the coupled ionization damage model,the ionization damage effects of lateral PNP (LPNP) bipolar junction transistors (BJT) are simulated.The model and algorithm are implemented based on the three-dimensional parallel adaptive finite element toolbox PHG (Parallel Hierarchical Grid).The phenomena of excess base current and current gain degradation in LPNP BJTs are successfully simulated via numerical calculation. A large-scale numerical experiment with 100 million elements and 1 024 MPI processes is carried out,demonstrating the good parallel scalability of the algorithm.

Key words: Zlamal finite element, radiation damage effects, LPNP BJT, parallel simulation

CLC Number:

TP391.9

Wang Qin, Ma Zhaocan, Li Hongliang, Zhang Linbo, Lu Benzhuo. Parallel Finite Element Simulations on Radiation Damage Effects of Lateral PNP BJTs[J]. Journal of System Simulation, 2020, 32(12): 2376-2382.

References 14

[1]	李兴冀,兰慕杰,刘超铭,等.偏置条件对NPN及PNP双极晶体管电离辐射损伤的影响研究[J].物理学报,2013,62(9):485-490.Li Xingji,Lan Mujie,Liu Chaoming,et al.The Influence of Bias Conditions on Ionizing Radiation Damage of NPN and PNP Transistors[J].Acta Physica Sinica,2013,62(9):485-490.
[2]	Schmidt D,Fleetwood D,Schrimpf R,et al.Comparison of Ionizing-Radiation-Induced Gain Degradation in Lateral,Substrate,and Vertical PNP BJTs[J].IEEE Transactions on Nuclear Science (S0018-9499),1995,42(6):1541-1549.
[3]	Zhang L.A Parallel Algorithm for Adaptive Local Refinement of Tetrahedral Meshes Using Bisection[J].Numerical Mathematics-theory Methods and Applications (S1004-8979),2009,2(1):65-89.
[4]	Vanroosbroeck W.Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors[J].Bell System Technical Journal (S0005-8580),1950,29(4):560-607.
[5]	成杰.基于PHG平台的半导体器件模拟研究与结构力学有限元软件研制[D].北京:中国科学院研究生院,2012.Cheng Jie.Parallel Semiconductor Device Simulation and Parallel Structural Mechanics Software Development Using the Toolbox PHG[D].Beijing:Graduate University of Chinese Academy of Sciences,2012.
[6]	Zlamal M.Finite-Element Solution of the Fundamental Equations of Semiconductor-Devices.I[J].Mathematics of Computation (S1088-6842),1986,46(173):27-43.
[7]	刘恩科,朱秉升,罗晋生.半导体物理学.第7版[M].北京:电子工业出版社,2017.Liu Erke,Zhu Bingssheng,Luo Jinsheng.The Physics of Semiconductors.7th Edition[M].Beijing:Publishing House of Electronics Industry,2017.
[8]	王芹,马召灿,白石阳,等.三维半导体器件漂移扩散模型的并行有限元方法研究[J].数值计算与计算机应用,2020,41(2):85-104.Wang Qin,Ma Zhaocan,Bai Shiyang,et al.Research on Parallel Finite Element Methods for the Drift-Diffusion Model in Semiconductor Device Simulations[J].Journal on Numerical Methods and Computer Applications,2020,41(2):85-104.
[9]	Rowsey N L,Law M E,Schrimpf R D,et al.A Quantitative Model for ELDRS and H2 Degradation Effects in Irradiated Oxides Based on First Principles Calculations[J].IEEE Transactions on Nuclear Science (S0018-9499),2011,58(6):2937-2944.
[10]	Xu J,Ma Z,Li H,et al.A Multi-Time-Step Finite Element Algorithm for 3D Simulation of Coupled Drift-diffusion-Reaction Process in Total Ionizing Dose Effect[J].IEEE Transactions on Semiconductor Manufacturing (S0894-6507),2018,31(1):183-189.
[11]	Pease R L,Adell P C,Rax B G,et al.The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits[J].IEEE Transactions on Nuclear Science (S0018-9499),2008,55(6):3169-3173.
[12]	李兴冀.星用双极型器件带电粒子辐照效应及损伤机理[D].哈尔滨:哈尔滨工业大学,2010.Li Xingji.Radiation Effects and Damage Mechanisms Caused by Charged Particles on Bipolar Devices Used for Spacecraft[D].Harbin:Harbin Institute of Technology,2010.
[13]	Enlow E W,Pease R L,Combs W,et al.Response of Advanced Bipolar Processes to Ionizing Radiation[J].IEEE Transactions on Nuclear Science (S0018-9499),1991,38(6):1342-1351.
[14]	黄成梓,白石阳,王芹,等.3Ddevice:半导体器件及其辐照损伤效应仿真软件系统[J].数值计算与计算机应用,2020,41(2):121-142.Huang Chengzi,Bai Shiyang,Wang Qin,et al.3Ddevice:A Simulation Software System for Semiconductor Devices and Radiation Effects[J].Journal on Numerical Methods and Computer Applications,2020,41(2):121-142.

Parallel Finite Element Simulations on Radiation Damage Effects of Lateral PNP BJTs

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