Study and Performance Analysis of Bar TSV Structure

doi:10.16182/j.issn1004731x.joss.201806006

Journal of System Simulation ›› 2018, Vol. 30 ›› Issue (6): 2044-2049.doi: 10.16182/j.issn1004731x.joss.201806006

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Study and Performance Analysis of Bar TSV Structure

Li Zhensong^{1, 2}, Miao Min^{2, *}

1. School of Information and Communication Engineering Beijing University of Posts and Telecommunications, Beijing 100876, China;
2. School of Information and Communication Engineering Beijing Information Science & Technology University, Beijing 100192, China

Received:2016-08-03 Revised:2016-10-17 Online:2018-06-08 Published:2018-06-14

Abstract

Abstract: A bar-through silicon via (B-TSV) structure is studied, and its 3D model and equivalent circuit model are proposed. The effects of design parameters formulas are investigated and concluded by a 3D electromagnetic solver. Performance comparison between B-TSV and the conventional cylindrical one is provided by simulation under the Ground-Signal-Ground configuration. The B-TSV structures are designed and fabricated in a printed circuit board (PCB) and the measured performance is given. Test results confirm that B-TSV has better performance than traditional one.

Key words: through silicon via (TSV), equivalent circuit model, performance simulation, three dimensional system level package (3D SIP)

CLC Number:

TN405

Li Zhensong, Miao Min. Study and Performance Analysis of Bar TSV Structure[J]. Journal of System Simulation, 2018, 30(6): 2044-2049.

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Study and Performance Analysis of Bar TSV Structure

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