系统仿真学报 ›› 2018, Vol. 30 ›› Issue (6): 2044-2049.doi: 10.16182/j.issn1004731x.joss.201806006

• 仿真建模理论与方法 • 上一篇    下一篇

条形TSV结构性能分析与研究

李振松1, 2, 缪旻2, *   

  1. 1. 北京邮电大学信息与通信工程学院,北京 100876;
    2. 北京信息科技大学信息与通信工程学院,北京 100192
  • 收稿日期:2016-08-03 修回日期:2016-10-17 出版日期:2018-06-08 发布日期:2018-06-14
  • 作者简介:李振松(1982-),男,广东韶关,博士生,副教授,研究方向为三维集成中的电信号传输技术;缪旻(通讯作者1973-),男,云南曲靖,博士,教授,研究方向为微纳信息系统。
  • 基金资助:
    国家自然科学基金(61674016), 北京市教委面上项目(KM201611232012)

Study and Performance Analysis of Bar TSV Structure

Li Zhensong1, 2, Miao Min2, *   

  1. 1. School of Information and Communication Engineering Beijing University of Posts and Telecommunications, Beijing 100876, China;
    2. School of Information and Communication Engineering Beijing Information Science & Technology University, Beijing 100192, China
  • Received:2016-08-03 Revised:2016-10-17 Online:2018-06-08 Published:2018-06-14

摘要: 分析了一种新型硅通孔(Through Silicon Via, TSV)结构——条形TSV(Bar-TSV)结构的三维模型和等效电路模型,推导了B-TSV结构GSG(Ground-Signal-Ground)传输模式下的等效电路模型中RLCG参数计算公式,并根据获得的计算公式进行了仿真验证,证实了等效电路参数计算公式的有效性。同时研究了B-TSV结构在GSG传输模式下主要参数变化对传输性能的作用机制并与传统TSV进行了性能对比分析。最后通过在印制电路板上加工出B-TSV结构样品并进行传输性能实测,验证了B-TSV相对于传统圆柱型TSV结构具有更好的传输性能。

关键词: 硅通孔, 等效电路模型, 性能仿真, 三维系统级封装

Abstract: A bar-through silicon via (B-TSV) structure is studied, and its 3D model and equivalent circuit model are proposed. The effects of design parameters formulas are investigated and concluded by a 3D electromagnetic solver. Performance comparison between B-TSV and the conventional cylindrical one is provided by simulation under the Ground-Signal-Ground configuration. The B-TSV structures are designed and fabricated in a printed circuit board (PCB) and the measured performance is given. Test results confirm that B-TSV has better performance than traditional one.

Key words: through silicon via (TSV), equivalent circuit model, performance simulation, three dimensional system level package (3D SIP)

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