单晶铜纳米黏着接触与分离过程的接触力分析

系统仿真学报 ›› 2015, Vol. 27 ›› Issue (2): 404-409.

单晶铜纳米黏着接触与分离过程的接触力分析

黄健萌, 陈晶晶

福州大学机械工程及自动化学院, 福州 350108

收稿日期:2014-01-07 修回日期:2014-03-26 发布日期:2020-09-02
作者简介:黄健萌(1973-),女,福建泉州,博士,副教授,研究方向为摩擦学;陈晶晶(1989-),男,江西临川,硕士生,研究方向为摩擦学。
基金资助:
国家自然科学基金资助项目(51205062, 51175085)

Analysis the Nano Contact Force of Single Crystal Copper in Contact and Separation Processes

Huang Jianmeng, Chen Jingjing

School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, China

Received:2014-01-07 Revised:2014-03-26 Published:2020-09-02

摘要/Abstract

摘要： 在考虑黏附力和单晶铜弹塑性变形基础上,基于EAM和Morse势函数和Verlet算法动态模拟了金刚石压头与单晶铜纳米黏着接触与分离过程。研究表明：压头尚未接触基体时, 压头与基体之间作用力主要表现为引力,基体最上层原子易与压头原子发生“突跳”黏着接触现象;继续下移时,接触力随压头位移增大而呈增加趋势, 且基体被压正下方不断发生位错原子堆积现象;压头与基体分离中, 接触力与压头位移曲线呈锯齿状减小趋势,并且分离过程位移对应于黏着下压接触位移发生明显的黏着滞后现象;分离后,部分原子被黏附于压头底表面, 基体已发生明显的塑性变形。

关键词: 接触力, 分子动力学, 黏着接触与分离

Abstract: On the basis of considering the adhesive force and copper substrate elastic-plastic deformation, the contact and separation processes between diamond indenter and copper substrate are simulated based on EAM and Morse potentials and Verlet algorithm. The results show that, when diamond indenter approaches slowly to copper substrate during the contact process, some atoms at the top level of substrate happened “snap back” phenomenon significantly due to the gravity became the main interaction force. Furthermore, it can be seen that the contact force and the accumulation phenomenon of dislocation atoms increase gradually with the increment of diamond displacements. During in separation process, the contact force decreases continuously with the declines of diamond indenter, the adhesive hysteresis phenomenon and some atoms adhered to the surface of diamond indenter can be seen obviously after separation absolutely.

Key words: contact force, molecular dynamics, adhesive contact and separation

中图分类号:

TH117.1

黄健萌, 陈晶晶. 单晶铜纳米黏着接触与分离过程的接触力分析[J]. 系统仿真学报, 2015, 27(2): 404-409.

Huang Jianmeng, Chen Jingjing. Analysis the Nano Contact Force of Single Crystal Copper in Contact and Separation Processes[J]. Journal of System Simulation, 2015, 27(2): 404-409.

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